- 您现在的位置：买卖IC网 > Sheet目录509 > SI4322-A0-FT (Silicon Laboratories Inc)IC RX FSK UNI 868/915MHZ 16TSSOP
Si4322
Wake-Up Timer Command
bit
15
1
14
1
13
1
12
0
11
r3
10
r2
9
r1
8
r0
7
m7
6
m6
5
m5
4
m4
3
m3
2
m2
1
m1
0
m0
POR
E196h
The wake-up time period can be calculated by M < m13 : m0 > , R < r3 : r0 > and D < d1 : d0 >:
T wake-up = M * 2 R-D ms
Not e:
The wake-up timer generates interrupts continuously at the programmed interval while the et bit is set.
Extended Wake-Up Timer Command
bit
15
1
14
1
13
0
12
0
11
0
10
0
9
1
8
1
7
d1
6
d0
5
m13
4
m12
3
m11
2
m10
1
m9
0
m8
POR
C300h
These bits can be used for further fine adjustment of the wake-up timer. The explanation of the bits can be found above.
Low Battery Detector and Microcontroller Clock Divider Command
bit
15
1
14
1
13
0
12
0
11
0
10
0
9
1
8
0
7
d2
6
d1
5
d0
4
elfc
3
t3
2
t2
1
t1
0
t0
POR
C213h
The 4-bit value T of t3 - t0 determines the threshold voltage of the threshold voltage V lb of the detector:
V lb = 2.0 V + T * 0.1 V
Bit 4 < elfc >:
Enables low frequency (32 kHz) microcontroller output clock during sleep mode.
Clock divider configuration (valid only if the crystal oscillator is on):
d2
0
0
0
0
1
1
1
1
d1
0
0
1
1
0
0
1
1
d0
0
1
0
1
0
1
0
1
Clock Output
Frequency [MHz]
1
1.25
1.66
2
2.5
3.33
5
10
AFC Command
Bit
15
1
14
1
13
0
12
0
11
0
10
1
9
1
8
0
7
a1
6
a0
5
rl1
4
rl0
3
st
2
fi
1
oe
0
en
POR
C687h
Bit 0 < en>:
Bit 1 < oe >:
Bit 2 < fi >:
Bit 3 < st>:
Enables the calculation of the offset frequency by the AFC circuit (it allows the addition of the content of
the output register to the frequency control word of the PLL).
Enables the output (frequency offset) register
Switches the circuit to high accuracy (fine) mode. In this case the processing time is about four times
longer, but the measurement uncertainty is less than half.
Strobe edge. When st goes to high, the actual latest calculated frequency error is stored into the output
registers of the AFC block.
11
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SI4324DY-T1-GE3
MOSFET N-CH D-S 30V 8-SOIC
SI4330-B1-FM
IC RCVR ISM 960MHZ 3.6V 20-QFN
SI4354DY-T1-GE3
MOSFET N-CH D-S 30V 8-SOIC
SI4355-B1A-FM
IC EZRADIO FM RECEIVER SI4355
SI4388DY-T1-GE3
MOSFET DUAL N-CH 30V 8-SOIC
SI4390DY-T1-GE3
MOSFET N-CH 30V 8.5A 8SOIC
SI4396DY-T1-GE3
MOSFET N-CH D-S 30V 8-SOIC
SI4398DY-T1-GE3
MOSFET N-CH 20V 19A 8-SOIC
相关代理商/技术参数
SI4322-A0-FTR
功能描述:射频接收器 Receiver (EZRadio) RoHS:否 制造商:Skyworks Solutions, Inc. 类型:GPS Receiver 封装 / 箱体:QFN-24 工作频率:4.092 MHz 工作电源电压:3.3 V 封装:Reel
Si4322-A1-FT
功能描述:射频接收器 RECEIVER EZRadio UNIVRSL ISM BAND FSK RoHS:否 制造商:Skyworks Solutions, Inc. 类型:GPS Receiver 封装 / 箱体:QFN-24 工作频率:4.092 MHz 工作电源电压:3.3 V 封装:Reel
SI4322DY-T1-E3
功能描述:MOSFET 30V 18A 5.4W 8.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4322DY-T1-GE3
功能描述:MOSFET 30V 18A 5.4W 8.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4324DY-T1-E3
功能描述:MOSFET 30V 36A 7.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4324DY-T1-GE3
功能描述:MOSFET 30V 36A 7.8W 3.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4330-A0-FM
功能描述:射频接收器 Receivers - IA4330 RoHS:否 制造商:Skyworks Solutions, Inc. 类型:GPS Receiver 封装 / 箱体:QFN-24 工作频率:4.092 MHz 工作电源电压:3.3 V 封装:Reel
SI4330-B1
制造商:SILABS 制造商全称:SILABS 功能描述:Si4330 ISM RECEIVER